High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics
نویسندگان
چکیده
منابع مشابه
High performance multilayer MoS2 transistors with scandium contacts.
While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right c...
متن کاملBreakdown of high-performance monolayer MoS2 transistors.
Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS(2)) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS(2) can be used for the fabrication of transistors exhibiting extremely high on/off ra...
متن کاملSelective and localized laser-anneal effect for high-performance flexible multilayer MoS2 thin-film transistors
We report enhanced performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates with ultra‐short, pulsed‐laser annealed Ti/Au contacts without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible PEN substrate with low thermal bu...
متن کاملNovel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where th...
متن کاملHigh-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics
Articles you may be interested in Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Appl. High-performance organic thi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4953062